bdv65-a-b-c 26/09/2012 comset semiconductors 1/4 n n n n p p s s i i l l i i c c o o n n d d a a r r l l i i n n g g t t o o n n s s p p o o w w e e r r t t r r a a n n s s i i s s t t o o r r s s they are silicon epitaxial base transistors mounted in to-3pn. theyare designed for audio output stages and general amplifier and switching applications. complementary is bdv64-a- b-c compliance to rohs. absolute maximum ratings symbol ratings value unit v ceo collector-emitter voltage bdv65 60 v bdv65a 80 BDV65B 100 bdv65c 120 v cbo collector-base voltage bdv65 60 v bdv65a 80 BDV65B 100 bdv65c 120 v ebo emitter-base voltage bdv65 5.0 v bdv65a BDV65B bdv65c i c collector current bdv65 12 a bdv65a BDV65B bdv65c i cm collector peak current bdv65 15 bdv65a BDV65B bdv65c i b base current bdv65 0.5 a bdv65a BDV65B bdv65c www.datasheet.net/ datasheet pdf - http://www..co.kr/
bdv65-a-b-c 26/09/2012 comset semiconductors 2/4 absolute maximum ratings symbol ratings value unit p t power dissipation t mb = 25 c bdv65 125 watts bdv65a BDV65B bdv65c t mb = 25 c bdv65 3.5 bdv65a BDV65B bdv65c t j junction temperature bdv65 150 c bdv65a BDV65B bdv65c t s storage temperature bdv65 -65 to +150 bdv65a BDV65B bdv65c thermal characteristics symbol ratings value unit r thj-c thermal resistance, junction to case bdv65 1 c / w bdv65a BDV65B bdv65c r thj-a thermal resistance, junction to ambient bdv65 35.7 bdv65a BDV65B bdv65c www.datasheet.net/ datasheet pdf - http://www..co.kr/
bdv65-a-b-c 26/09/2012 comset semiconductors 3/4 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ mx unit i ceo collector cutoff current v ce = 30 v, i b = 0 bdv65 - - 2 ma v ce = 40 v, i b = 0 bdv65a v ce = 50 v, i b = 0 BDV65B v ce = 60 v, i b = 0 bdv65c i ebo emitter cutoff current v be = 5 v, i c = 0 bdv65 - - 5 ma bdv65a BDV65B bdv65c i cbo collector cutoff current i e = 0 t j =25c v cb = 60 v bdv65 - - 0.4 ma v cb = 80 v bdv65a v cb = 100 v BDV65B v cb = 120 v bdv65c i e = 0 t j =150c v cb = 30 v bdv65 - - 2 v cb = 40 v bdv65a v cb = 50 v BDV65B v cb = 60 v bdv65c v ceo collector-emitter breakdown voltage (*) i c = 30 ma, i b = 0 bdv65 60 - - v bdv65a 80 - BDV65B 100 - - bdv65c 120 - - h fe dc current gain (*) v ce = 4 v, i c = 5 a bdv65 1000 - - - bdv65a BDV65B bdv65c v ce(sat) collector-emitter saturation voltage (*) i c = 5 a, i b = 20 ma bdv65 - - 2 v bdv65a BDV65B bdv65c v be base-emitter voltage(*) v ce = 4 v, i c = 5 a bdv65 - - 2,5 v bdv65a BDV65B bdv65c (*) pulse width 300 s, duty cycle 1.5 % www.datasheet.net/ datasheet pdf - http://www..co.kr/
bdv65-a-b-c 26/09/2012 comset semiconductors 4/4 mechanical data case to3pn n on isolated plastic package revised august 2012 ????????? ? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. co mset semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does comset semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. comset semiconductors? products are not au thorized for use as critical components in life support devices or systems. ? ? www.comsetsemi.com info@comsetsemi.com dimensions (mm) min. max. a 15.20 1600 b 1.90 2.10 c 4.60 5.00 d 3.10 3.30 e 9.60 f 2.00 g 0.35 0.55 h 1.40 j 5.35 5.55 k 20.00 l 19.60 20.20 m 0.95 1.25 n 2.00 o 3.00 p 4.00 r 4.00 s 1.80 t 4.80 5.20 pin 1 : base pin 2 : collector pin 3 : emitter package collector www.datasheet.net/ datasheet pdf - http://www..co.kr/
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